![Description of transport properties of Schottky diodes created by deposition of colloidal graphite on semiconductor materials | ÚFE Description of transport properties of Schottky diodes created by deposition of colloidal graphite on semiconductor materials | ÚFE](https://www.ufe.cz/sites/default/files/uspechy/486_yatskiv_fig_1.jpg)
Description of transport properties of Schottky diodes created by deposition of colloidal graphite on semiconductor materials | ÚFE
![High-frequency organic rectifiers through interface engineering | MRS Communications | Cambridge Core High-frequency organic rectifiers through interface engineering | MRS Communications | Cambridge Core](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20171228043427532-0772:S2159685917001008:S2159685917001008_fig2g.jpeg?pub-status=live)
High-frequency organic rectifiers through interface engineering | MRS Communications | Cambridge Core
![A performance-enhanced planar Schottky diode for Terahertz applications: an electromagnetic modeling approach | International Journal of Microwave and Wireless Technologies | Cambridge Core A performance-enhanced planar Schottky diode for Terahertz applications: an electromagnetic modeling approach | International Journal of Microwave and Wireless Technologies | Cambridge Core](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary-alt:20171229100548-98543-mediumThumb-S1759078717000940_fig2g.jpg?pub-status=live)
A performance-enhanced planar Schottky diode for Terahertz applications: an electromagnetic modeling approach | International Journal of Microwave and Wireless Technologies | Cambridge Core
![BAT48 STMicroelectronics - Dioda: usměrňovací Schottky | THT; 40V; 0,35A; DO35; role,páska | TME Czech Republic s.r.o. - Elektronické součástky BAT48 STMicroelectronics - Dioda: usměrňovací Schottky | THT; 40V; 0,35A; DO35; role,páska | TME Czech Republic s.r.o. - Elektronické součástky](https://ce8dc832c.cloudimg.io/v7/_cdn_/3D/F2/00/00/0/12243_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=bc195b92b1aae49c7b4e136481a7ebc046c1dd06)
BAT48 STMicroelectronics - Dioda: usměrňovací Schottky | THT; 40V; 0,35A; DO35; role,páska | TME Czech Republic s.r.o. - Elektronické součástky
![Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers - ScienceDirect Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0925963522002709-ga1.jpg)